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| Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992 Preliminary Specifications ML46580S-992 High Reliability Semiconductor - Beam Lead Gallium Arsenide Tuning Varactor Diode Features * * * * * Constant Gamma of 1.25 Strong Beam Construction Low Parasitic Capacitance High Q Close Capacitance Tracking E C Package Outline B A B Description The ML46580S-992 is a Gallium Arsenide Beam Lead Tuning Varactor having a Hyperabrupt junction with a resultant constant gamma characteristic. The constant gamma, high Q values and the elimination of package parasitics are extremely beneficial for the linear tuning of voltage controlled oscillators at frequencies above 20 GHz. This device has been tested previously for space application in accordance with the requirements of ESA Generic Specifications PSS-01-608 and ESA/SCC 5010. High Reliability Beam Lead diodes can be supplied using the same procedures established for chip diodes. These procedures detailed in M/A-COM control document MP3021-001 incorporate the essential elements of ESA/SCC 5010. M/A-COM can also provide Gallium Arsenide Beam Lead Tuning Varactor diodes with a constant gamma of 1.0 and also with capacitance up to 2pF. The Semiconductor Master Catalogue, available on request, contains detailed information of the following additional Tuning Varactor types many of which are suitable for space application. * * * Surface Mount (SOT-23) Tuning Varactors Axial Lead Tuning Varactors Silicon Abrupt and Hyperabrupt Junction Tuning Varactors * * D CATHODE BEAM F DIE THICKNESS DIM A B C D E F INCHES Min. 0.012 0.010 0.006 0.004 0.007 -- MILLIMETERS Max. 0.014 -- 0.008 0.006 0.009 0.004 Min. 0.305 0.254 0.152 0.102 0.178 0.305 Max. 0.356 -- 0.203 0.152 0.229 0.1026 GaAs Abrupt Junction Tuning Varactors GaAs Hyperabrupt Junction Tuning Varactors with Constant Gamma 0.75, 1.25, 1.5 Maximum Ratings (Tamb = +25C) No. 1 2 3 4 5 Characteristics Power Dissipation Reverse Voltage Forward Current Operating Temperature Storage Temperature Symbol PO VR IF TOP TSTO Maximum Ratings 25.0 18 50 -65 to +150 -65 to +150 Units mW V mA C C Remarks See Note 1 See Note 2 Notes: 1. Derate linearly to 0 mW from 25C to 150C 2. Derate linearly to 0 mA from 25C to 150C V1.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction. Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992 Electrical Measurements at Room Temperature d.c. and a.c. Parameters No. 1 2 3 4 5 6 Characteristics Forward Voltage Reverse Current 1 Reverse Current 2 Junction Capacitance Quality Factor Total Capacitance Ratio Symbol VF1 I R1 I R2 CJ 4 Q4 C T2 /C T12 MIL-STD-750 Test Method 4011 4016 4016 4001 see Note 2 4001 Test Conditions IF = 10A VR = -12V VR = 18V VR = 4V F = 1 MHz VR = 4.0 v F = 1 MHz VR = 2.0 v VR = 12 v F = 1 MHz see Note 3 VR = 2.0V to VR = 12V Min. -- -- -- 0.45 3000 4.5:1 Limits Max. 1.4 20 10 0.55 -- 6.5:1 Units V nA A pF -- -- 7 Gamma see Note 4 1.125 1.375 -- Notes: 2. Quality Factor is measured on a sample of 10 Beam Lead devices selected at random from the production wafer and assembled in a ceramic microstrip package. The measurement is carried out at a test frequency above 1 GHz and extrapolated to 50 MHz. 3. Total Capacitance Ratio is measured on the sample of 10 devices used for Q measurement. 4. Measurement/Calculation of Capacitance-Voltage Slope Exponent (Gamma). The capacitances of a sample of 10 diodes taken at random from the production lot are measured at 2.0, 3.0, 4.0, 6.0, 8.0, 9.0, 10.0, 12.0, volts reverse bias voltage. Junction capacitance CJ is calculated by subtracting the package capacitance of the test package. The Gamma values are then calculated between each pair of adjacent voltages using the following formula: = log10 {Cj (VR1) / Cj (VR2) } log10 {VR2 + 1.3 / VR1 + 1.3} Electrical Measurements at High and Low Temperature, -55C to +125C No. 1 Characteristics Reverse Current Symbol IR MIL-STD-750 Test Method 4016 Test Conditions V R = 12V Min. -- Limits Max. 50 Units A Parameter Drift Values No. 2 3 Characteristics Reverse Current Forward Voltage Symbol IR VF Change Limits 10 nA or 100% whichever is the greater referred to the initial measurement 100 mV or 100% Test Conditions VR = 12 Volts IF = 10 A V1.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction. Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992 Conditions for High Temperature Reverse Bias Burn-In No. 2 3 Characteristics Reverse Voltage Ambient Temperature Symbol VR Tamb Conditions 14 1 +50 +0, -5 Units V C Conditions for Operating Life Tests No. 1 2 Characteristics Reverse Voltage Ambient Temperature Symbol VR Tamb Conditions 14 1 +150 +0, -5 Units V C Electrical Measurements at Intermediate Points and Completion of Endurance Testing No. 1 2 3 Characteristics Forward Voltage Reverse Current Junction Capacitance Symbol VF IR CJ 4 MIL-STD-750 Test Method 4011 4016 4001 Test Conditions I F = 10 A VR = 12 Volts VR = 4 Volts F = 1 MHz CJ =C TOTAL - C PACKAGE Min. Limits Max. 1.4 20 0.55 Units V nA pF 0.45 Electrical Measurements During and on Completion of Radiation Testing (only if requested) No. 1. Characteristics Reverse Voltage Symbol VR MIL-STD-750 Test Method 4016 Test Conditions V R= 12 Volts 20 nA or 200% whichever is greater V1.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction. Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992 Typical Performance Curves (MA46580 Series) Gamma = 1.0 10% from 2-12 Volts (MA46585 through to MA46589) Gamma = 1.25 10% from 2-12 Volts (MA46580 through to MA46584) CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) MA46580 - 46584 Capacitance vs Voltage MA46585 - 46589 Capacitance vs Voltage CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) Capacitance RatioC T-2 /C TV for MA46580-46584 Series Capacitance Ratio C T-2 /C TV for MA46585-46589 Series V1.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction. |
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